MRF6S21190HR3 MRF6S21190HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA
and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
?
Typical Single-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
=
1600 mA,
Pout
= 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 16 dB
Drain Efficiency ? 29%
Device Output Signal PAR ? 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? -38 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
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100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Designed for Digital Predistortion Error Correction Systems
?
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
?
RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
175
1
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
RθJC
0.29
0.30
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S21190HR3
MRF6S21190HSR3
2110-2170 MHz, 54 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S21190HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S21190HR3
Document Number: MRF6S21190H
Rev. 1, 3/2008
Freescale Semiconductor
Technical Data
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Freescale Semiconductor, Inc., 2008. All rights reserved.
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